XC5VSX50T-1FFG665C

Product Summary

The XC5VSX50T-1FFG665C is an FPGA. The XC5VSX50T-1FFG665C provides the newest most powerful features in the FPGA market. Using the second generation ASMBL(Advanced Silicon Modular Block) column-based architecture, the XC5VSX50T-1FFG665C contains five distinct platforms (sub-families), the most choice offered by any FPGA family. The XC5VSX50T-1FFG665C features to address the needs of a wide variety of advanced logic designs. The XC5VSX50T-1FFG665C offers the best solution for addressing the needs of high-performance logic designers, high-performance DSP designers, and high-performance embedded systems designers with unprecedented logic, DSP, hard/soft microprocessor, and connectivity capabilities.

Parametrics

XC5VSX50T-1FFG665C absolute maximum ratings : (1)Internal supply voltage relative to GND: –0.5 to 1.1 V; (2)Auxiliary supply voltage relative to GND: –0.5 to 3.0 V; (3)Output drivers supply voltage relative to GND: –0.5 to 3.75 V; (4)Key memory battery backup supply: –0.5 to 4.05 V; (5)Input reference voltage: –0.5 to 3.75 V; (6)3.3V I/O input voltage relative to GND (user and dedicated I/Os): –0.75 to 4.05 V; (7)2.5V or below I/O input voltage relative to GND (user and dedicated I/Os): –0.75 to VCCO + 0.5 V; (8)Voltage applied to 3-state 3.3V output (user and dedicated I/Os): –0.75 to 4.05 V; (9)Voltage applied to 3-state 2.5V or below output (user and dedicated I/Os): –0.75 to VCCO + 0.5 V; (10)Storage temperature (ambient): –65 to 150 ℃; (11)Maximum soldering temperature: +220 ℃; (12)Maximum junction temperature: +125 ℃.

Features

XC5VSX50T-1FFG665C features:(1)most advanced, high-performance, optimal-utilization, fpga fabric; (2)powerful clock management tile (cmt) clocking; (3)36-Kbit block RAM/FIFOs; (4)high-performance parallel selectio technology; (5)integrated endpoint blocks for pci express designs; (6)tri-mode 10/100/1000 Mb/s Ethernet MACs; (7)rocketIO GTP transceivers 100 Mb/s to 3.75 Gb/s; (8)rocketIO GTX transceivers 150 Mb/s to 6.5 Gb/s; (9)powerPC 440 Microprocessors; (10)65-nm copper CMOS process technology; (11)1.0V core voltage; (12)High signal-integrity flip-chip packaging available in standard or Pb-free package options.

Diagrams